Hunting down the ohmic contact of organic field-effect transistor<xref rid="cpb_28_11_118501fn1" ref-type="fn">*</xref><fn id="cpb_28_11_118501fn1"><label>*</label><p>Project supported by the Slovak Research and Development Agency (Grant Nos. APVV-17-0501 and APVV-17-0522) and the Slovak Grant Agency for Science (Grants No. 1/0776/15).</p></fn>

Hunting down the ohmic contact of organic field-effect transistor**

Project supported by the Slovak Research and Development Agency (Grant Nos. APVV-17-0501 and APVV-17-0522) and the Slovak Grant Agency for Science (Grants No. 1/0776/15).

Micjan M, Novota M, Telek P, Donoval M, Weis M^†

Evaluated adjusted coefficient of determination for fittings shown in Fig. 4. The models are current crowding (CC), resistive network (RN), Fowler–Nordheim tunneling (FN), and thermionic injection also denoted as Schottky emission (Sch).