Hunting down the ohmic contact of organic field-effect transistor<xref rid="cpb_28_11_118501fn1" ref-type="fn">*</xref><fn id="cpb_28_11_118501fn1"><label>*</label><p>Project supported by the Slovak Research and Development Agency (Grant Nos. APVV-17-0501 and APVV-17-0522) and the Slovak Grant Agency for Science (Grants No. 1/0776/15).</p></fn>

Hunting down the ohmic contact of organic field-effect transistor**

Project supported by the Slovak Research and Development Agency (Grant Nos. APVV-17-0501 and APVV-17-0522) and the Slovak Grant Agency for Science (Grants No. 1/0776/15).

Micjan M, Novota M, Telek P, Donoval M, Weis M^†

Detailed view of output characteristics linear region of the OFET devices using various metals for source/drain electrodes. The output characteristics were recorded for the gate–source voltage varied from 0 to −40 V (step 5 V).