InP quantum dots-based electroluminescent devices<xref rid="cpb_28_11_118103fn1" ref-type="fn">*</xref><fn id="cpb_28_11_118103fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, and 61735004), the National Key Research and Development Program of China (Grant No. 2016YFB0401702), Shanghai Science and Technology Committee, China (Grant No. 19010500600), Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China.</p></fn>

InP quantum dots-based electroluminescent devices**

Project supported by the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, and 61735004), the National Key Research and Development Program of China (Grant No. 2016YFB0401702), Shanghai Science and Technology Committee, China (Grant No. 19010500600), Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China.

Wu Qianqian^{1, 2}, Cao Fan², Kong Lingmei^{1, 2}, Yang Xuyong^{2, †}

Device characteristics of the inverted InP/ZnSeS/ZnS QLEDs with different ETLs: (a) luminance as a function of applied bias, (b) CE–J, (c) EQE–J, and (d) PE–J spectra of this device.^[42] Reproduced with permission. Copyright 2017, Wiley.