InP quantum dots-based electroluminescent devices<xref rid="cpb_28_11_118103fn1" ref-type="fn">*</xref><fn id="cpb_28_11_118103fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, and 61735004), the National Key Research and Development Program of China (Grant No. 2016YFB0401702), Shanghai Science and Technology Committee, China (Grant No. 19010500600), Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China.</p></fn>

InP quantum dots-based electroluminescent devices**

Project supported by the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, and 61735004), the National Key Research and Development Program of China (Grant No. 2016YFB0401702), Shanghai Science and Technology Committee, China (Grant No. 19010500600), Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China.

Wu Qianqian^{1, 2}, Cao Fan², Kong Lingmei^{1, 2}, Yang Xuyong^{2, †}

(a) Schematic device structure of multilayered InP QLED and (b) energy levels of individual layers of the device. (c) Normalized EL and PL spectra, J–V–L and CE–L–EQE characteristics of the device. (f) Histogram of peak EQEs measured from 36 devices. Reproduced with permission.^[35] Copyright 2018, American Chemical Society.