InP quantum dots-based electroluminescent devices<xref rid="cpb_28_11_118103fn1" ref-type="fn">*</xref><fn id="cpb_28_11_118103fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, and 61735004), the National Key Research and Development Program of China (Grant No. 2016YFB0401702), Shanghai Science and Technology Committee, China (Grant No. 19010500600), Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China.</p></fn>

InP quantum dots-based electroluminescent devices**

Project supported by the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, and 61735004), the National Key Research and Development Program of China (Grant No. 2016YFB0401702), Shanghai Science and Technology Committee, China (Grant No. 19010500600), Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China.

Wu Qianqian^{1, 2}, Cao Fan², Kong Lingmei^{1, 2}, Yang Xuyong^{2, †}

(a) Energy band diagram of the QLEDs using InP/ZnS QDs. (b) PL spectrum of red-emitting InP/ZnS NCs and EL spectrum of white QLEDs. (c) CIE chromaticity coordinate diagram of the white QLEDs and a photograph of a QLED with a pixel size of 3 mm × 3 mm (inset). Reproduced with permission.^[24] Copyright 2012, Wiley.