Effect of growth temperature of GaAsx Sb1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate<xref rid="cpb_28_11_118102_fn1" ref-type="fn">*</xref><fn id="cpb_28_11_118102_fn1"><label>*</label>Project supported by the National Defense Advanced Research Project, China (Grant No. 315 xxxxx301), the National Defense Innovation Program, China (Grant No. 48xx4), the National Key Technologies Research and Development Program, China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant No. 61505196).</fn>

Effect of growth temperature of GaAs_x Sb_1–x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate**

Project supported by the National Defense Advanced Research Project, China (Grant No. 315 xxxxx301), the National Defense Innovation Program, China (Grant No. 48xx4), the National Key Technologies Research and Development Program, China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant No. 61505196).

Zhang Jing^{1, 2}, Lv Hong-Liang^{1, †}, Ni Hai-Qiao^{2, ‡}, Yang Shi-Zheng¹, Cui Xiao-Ran^{1, 2}, Niu Zhi-Chuan², Zhang Yi-Men¹, Zhang Yu-Ming¹

Electron mobility μ and 2DEG concentration n_s versus growth temperature.