Giant enhancement of superconductivity in few layers MoTe<sub>2</sub><xref rid="cpb_28_11_117401fn1" ref-type="fn">*</xref><fn id="cpb_28_11_117401fn1"><label>*</label><p>Project supported by the Guangdong Innovative and Entrepreneurial Research Team Program, China (Grant No. 2016ZT06D348), the National Natural Science Foundation of China (Grant No. 11874193), and the Shenzhen Fundamental Subject Research Program, China (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022).</p></fn>

Giant enhancement of superconductivity in few layers MoTe₂**

Project supported by the Guangdong Innovative and Entrepreneurial Research Team Program, China (Grant No. 2016ZT06D348), the National Natural Science Foundation of China (Grant No. 11874193), and the Shenzhen Fundamental Subject Research Program, China (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022).

Gan Yuan^{1, 2}, Cho Chang-Woo², Li Alei², Lyu Jian², Du Xu³, Wen Jin-Sheng¹, Zhang Li-Yuan^{2, †}

(a) Temperature dependence of the normalized resistance (R/R_{250 K}) for MoTe₂ crystals with thickness ranging from 4.0 nm to 9.3 nm, with inset showing low-temperature zoom-in of the normalized resistance (R/R_{10 K}) as a function of temperature. (b) Superconducting phase transition temperature T_c as a function of sample thickness with T_c being defined as 90% and 60% of normal state resistance at 10 K, and the blue dotted line referring to bulk T_c,0 cited from Ref. [8]. (c) Electrical Hall resistivity data as a function of a magnetic field for various sample thickness values. (d) Carrier concentration and mobility (inset) at different sample thicknesses at 5 K, extracted from two-band model fit.