Hysteresis effect in current–voltage characteristics of Ni/n-type 4H-SiC Schottky structure<xref rid="cpb_28_11_117303fn1" ref-type="fn">*</xref> <fn id="cpb_28_11_117303fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61804118, 61774117, and 61774119), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 20101185935 and 20106186647), the National Key Basic Research Program of China (Grant No. 2015CB759600), the Shaanxi Key Research and Development Program, China (Grant No. 2018ZDXM-GY-008), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2017JM6003).</p> </fn>

Hysteresis effect in current–voltage characteristics of Ni/n-type 4H-SiC Schottky structure* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 61804118, 61774117, and 61774119), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 20101185935 and 20106186647), the National Key Basic Research Program of China (Grant No. 2015CB759600), the Shaanxi Key Research and Development Program, China (Grant No. 2018ZDXM-GY-008), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2017JM6003).

Yuan Hao, Song Qing-Wen^†, Han Chao, Tang Xiao-Yan, He Xiao-Ning, Zhang Yu-Ming, Zhang Yi-Men

Schematic representation of the model used to explain hysteresis effect in forward I–V of Ni/4H-SiC Schottky contact, showing (I) electrons tunneling from 4H-SiC layer to interface trap, and (II) electrons filling interface states.