Effect of transient space–charge perturbation on carrier transport in high-resistance CdZnTe semiconductor<xref rid="cpb_28_11_117201fn1" ref-type="fn">*</xref><fn id="cpb_28_11_117201fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61874089), the Fund of MIIT (Grant No. MJ-2017-F-05), the 111 Project of China (Grant No. B08040), the NPU Foundation for Fundamental Research, China, and the Research Found of the State Key Laboratory of Solidification Processing (NWPU), China.</p></fn>

Effect of transient space–charge perturbation on carrier transport in high-resistance CdZnTe semiconductor**

Project supported by the National Natural Science Foundation of China (Grant No. 61874089), the Fund of MIIT (Grant No. MJ-2017-F-05), the 111 Project of China (Grant No. B08040), the NPU Foundation for Fundamental Research, China, and the Research Found of the State Key Laboratory of Solidification Processing (NWPU), China.

Guo Yu, Zha Gang-Qiang^†, Li Ying-Rui, Tan Ting-Ting, Zhu Hao, Wu Sen

Principle of transient space–charge effect.