Effect of transient space–charge perturbation on carrier transport in high-resistance CdZnTe semiconductor Project supported by the National Natural Science Foundation of China (Grant No. 61874089), the Fund of MIIT (Grant No. MJ-2017-F-05), the 111 Project of China (Grant No. B08040), the NPU Foundation for Fundamental Research, China, and the Research Found of the State Key Laboratory of Solidification Processing (NWPU), China. |
Principle of transient space–charge effect. |
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