Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance

Xu Hui-Fang^†, Cui Jian, Sun Wen, Han Xin-Feng

(a) I_on and I_off varying with L₁ for NDMCG TFET, and (b) I_amb varying with L₁ for NDMCG TFET and DMCG TFET.