Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance
Xu Hui-Fang †, Cui Jian, Sun Wen, Han Xin-Feng
       

(a) Ion and Ioff varying with L2 for NDMCG TFET, and (b) Iamb varying with L2 for NDMCG TFET and DMCG TFET.