Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance

Xu Hui-Fang^†, Cui Jian, Sun Wen, Han Xin-Feng

Comparisons (a) energy band under ambipolar state, (b) transfer characteristics, and (c) subthreshold swing between NDMCG TFET and DMCG TFET.