Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance
Xu Hui-Fang †, Cui Jian, Sun Wen, Han Xin-Feng
       

Comparison of curves of (a) GBP, (b) ft, τ, and (c) TFP versus Vgs between NDMCG TFET and DMCG TFET, with Vds fixed at 0.5 V.