Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

Chen Yanxu¹, Xu Dongliang¹, Xu Kaikai^{1, †}, Zhang Ning¹, Liu Siyang², Zhao Jianming¹, Luo Qian¹, Snyman Lukas W³, Swart Jacobus W⁴

Efficiency of Si p + n junction. For instance, at the reverse bias V = 40 V, the quantum efficiency (blue diamonds) is about 6 × 10 − 8 and the power conversion efficiency (pink squares) is 2.8 × 10 − 9 .