Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

Chen Yanxu¹, Xu Dongliang¹, Xu Kaikai^{1, †}, Zhang Ning¹, Liu Siyang², Zhao Jianming¹, Luo Qian¹, Snyman Lukas W³, Swart Jacobus W⁴

Intensity spectra of the p–n junction based silicon light-emitting device in the injection-avalanche mode of operation for various injection current levels (in this case a reverse current of 45 mA induced by the junction’s avalanching is applied).