Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC
Chen Yanxu1, Xu Dongliang1, Xu Kaikai1, †, Zhang Ning1, Liu Siyang2, Zhao Jianming1, Luo Qian1, Snyman Lukas W3, Swart Jacobus W4
       

Parasitic capacitance–voltage characteristic of the silicon light-emitting device with p–n junction structure.