Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

Chen Yanxu¹, Xu Dongliang¹, Xu Kaikai^{1, †}, Zhang Ning¹, Liu Siyang², Zhao Jianming¹, Luo Qian¹, Snyman Lukas W³, Swart Jacobus W⁴

Characterization of the depletion region: (a) simulated electric field distribution in the drift region obtained through Poisson equation integration; (b) field peak as a function of reverse biased voltage.