Yang Yun-Kun1, 2, Xiu Fa-Xian1, 2, Wang Feng-Qiu1, 3, Wang Jun4, 5, Shi Yi1, 3, 6, †
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(a) and (b) R–T curves with different annealing temperatures, showing that RRR decreases with annealing temperature increasing when
T
<
550
°
C
, tendency is opposite above 550 °C, and a semiconducting property occurs at higher annealing temperatures; (c) and (d) curves of oscillation amplitudes versus field, indicating that amplitude increases with annealing temperature rising.
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