Electrical transport and optical properties of Cd3As2 thin films |
(a) Schematic illustration of capping and annealing film structure, (b) XRD patterns at different annealing temperatures, (c) value of FWHM varying with annealing temperature. Experimental data denoted as 0 °C in panels (b) and (c) represent the results for samples before annealing but after ALD process; and origin and OG in panels (b) and (c), respectively, represent samples before the ALD process. |