Electrical transport and optical properties of Cd3As2 thin films
Yang Yun-Kun1, 2, Xiu Fa-Xian1, 2, Wang Feng-Qiu1, 3, Wang Jun4, 5, Shi Yi1, 3, 6, †
       

(a) Schematic illustration of capping and annealing film structure, (b) XRD patterns at different annealing temperatures, (c) value of FWHM varying with annealing temperature. Experimental data denoted as 0 °C in panels (b) and (c) represent the results for samples before annealing but after ALD process; and origin and OG in panels (b) and (c), respectively, represent samples before the ALD process.