(a) Schematic diagram of standard six-probe Hall bar fabricated on Cd₃As₂ thin films with mica substrate, used for transport measurements in the PPMS system. Crystal orientation is (112), which is perpendicular to the magnetic field (up to 9 T). (b) Zero-field temperature-dependent longitudinal resistance R_xx curves for five Cd₃As₂ thin films with different thicknesses ranging from 50 nm to 900 nm; R_xx drops with sample thickness reducing, indicating a thickness-induced insulator-to-metal transition. (c) Variations of carrier mobility μ with temperature. Carrier mobility is about 3750 cm 2 · V − 1 · s − 1 − 9750 cm 2 · V − 1 · s − 1 at 2 K. (d) Sketch of band structure with band gap opening for Cd₃As₂ thin films. (e) MR ratio at 2 K, showing non-saturation behavior and the largest ratio reaching 343.5%. (f) Nearly linear relationship between MR and electron mobility, which drops from 343.5% to 58.8%. Figure 1 is adapted from Ref. [38].