Magnetoresistance hysteresis in topological Kondo insulator SmB6 nanowire
Kong Ling-Jian1, Zhou Yong2, Song Hua-Ding1, Yu Da-Peng2, Liao Zhi-Min1, 3, 4, †
       

(a) Schematic diagram of device; variations of MR with B at (b) 5 K and (c) 10 K of SmB6 nanowire measured at different temperatures with a perpendicular magnetic field and 0.1- μ A bias current. The hysteresis loop is small.