Magnetoresistance hysteresis in topological Kondo insulator SmB6 nanowire
Kong Ling-Jian1, Zhou Yong2, Song Hua-Ding1, Yu Da-Peng2, Liao Zhi-Min1, 3, 4, †
       

Plots of MR of SmB6 nanowire versus B, measured at different temperatures. The magnetic field is parallel to SmB6 nanowire. The bias current is 0.1 μ A . (a) Schematic diagram of the nanowire device, (b) MR at 1.5 K without hysteresis behavior. (c)–(f) The MR values versus B at 4 K, 5 K, 6 K, and 7 K, respectively. The hysteresis behavior gradually becomes obvious.