Magnetoresistance hysteresis in topological Kondo insulator SmB6 nanowire
Kong Ling-Jian1, Zhou Yong2, Song Hua-Ding1, Yu Da-Peng2, Liao Zhi-Min1, 3, 4, †
Plots of MR of SmB6 nanowire versus B, measured at different temperatures. The magnetic field is parallel to SmB6 nanowire. The bias current is 0.1μA. (a) Schematic diagram of the nanowire device, (b) MR at 1.5 K without hysteresis behavior. (c)–(f) The MR values versus B at 4 K, 5 K, 6 K, and 7 K, respectively. The hysteresis behavior gradually becomes obvious.