Magnetoresistance hysteresis in topological Kondo insulator SmB6 nanowire
Kong Ling-Jian1, Zhou Yong2, Song Hua-Ding1, Yu Da-Peng2, Liao Zhi-Min1, 3, 4, †
       

(a) SEM image of SmB6 nanowires grown by CVD method. (b) TEM image of SmB6 nanowire, with inset showing corresponding diffraction pattern. (c) SEM image of typical device. (d) Variation of resistance of SmB6 nanowire with temperature.