Electronic structure of molecular beam epitaxy grown <inline-formula> <tex-math><?CDATA $1{{\rm{T}}}^{{\prime} }$?></tex-math><mml:math> <mml:mn>1</mml:mn> <mml:msup> <mml:mrow> <mml:mi mathvariant="normal">T</mml:mi> </mml:mrow> <mml:mrow> <mml:mo>′</mml:mo> </mml:mrow> </mml:msup> </mml:math> <inline-graphic xmlns:xlink="https://www.w3.org/1999/xlink" xlink:href="cpb_28_10_107307_ieqn1.gif"/> </inline-formula>-MoTe<sub>2</sub> film and strain effect

Electronic structure of molecular beam epitaxy grown

1 T ′

-MoTe₂ film and strain effect

Zhou Xue¹, Jiang Zeyu¹, Zhang Kenan¹, Yao Wei¹, Yan Mingzhe¹, Zhang Hongyun¹, Duan Wenhui¹, Zhou Shuyun^{1, 2, †}

Evolution of the electronic structure with strain from first principles calculation. (a)–(e) Calculated band structure of monolayer 1 T ′ -MoTe₂ with uniaxial strains from −2% to 3% along the b-axis direction. (f)–(j) Calculated band structure of monolayer 1 T ′ -MoTe₂ with uniaxial strains from −2% to 3% along the a-axis direction. All calculated dispersions are shifted by −0.09 eV in energy.