Electronic structure of molecular beam epitaxy grown <inline-formula> <tex-math><?CDATA $1{{\rm{T}}}^{{\prime} }$?></tex-math><mml:math> <mml:mn>1</mml:mn> <mml:msup> <mml:mrow> <mml:mi mathvariant="normal">T</mml:mi> </mml:mrow> <mml:mrow> <mml:mo>′</mml:mo> </mml:mrow> </mml:msup> </mml:math> <inline-graphic xmlns:xlink="https://www.w3.org/1999/xlink" xlink:href="cpb_28_10_107307_ieqn1.gif"/> </inline-formula>-MoTe<sub>2</sub> film and strain effect

Electronic structure of molecular beam epitaxy grown

1 T ′

-MoTe₂ film and strain effect

Zhou Xue¹, Jiang Zeyu¹, Zhang Kenan¹, Yao Wei¹, Yan Mingzhe¹, Zhang Hongyun¹, Duan Wenhui¹, Zhou Shuyun^{1, 2, †}

Electronic structure of 1 T ′ -MoTe₂ revealed by ARPES measured at ∼10 K. (a) Intensity maps measured from E_F to −0.84 eV with an integrated energy window of 50 meV. (b) ARPES spectrum measured along the Γ –X direction (marked by dotted line in (a)). (c) Zoom-in dispersion near E_F. (d) Calculated dispersions along the Γ –X direction (blue) and Γ –P/ P ′ (red) and (e) zoom-in dispersion near E_F with a uniaxial strain of 2% along the b-axis direction and a shift −0.09 eV in energy.