Electronic structure of molecular beam epitaxy grown <inline-formula> <tex-math><?CDATA $1{{\rm{T}}}^{{\prime} }$?></tex-math><mml:math> <mml:mn>1</mml:mn> <mml:msup> <mml:mrow> <mml:mi mathvariant="normal">T</mml:mi> </mml:mrow> <mml:mrow> <mml:mo>′</mml:mo> </mml:mrow> </mml:msup> </mml:math> <inline-graphic xmlns:xlink="https://www.w3.org/1999/xlink" xlink:href="cpb_28_10_107307_ieqn1.gif"/> </inline-formula>-MoTe<sub>2</sub> film and strain effect

Electronic structure of molecular beam epitaxy grown

1 T ′

-MoTe₂ film and strain effect

Zhou Xue¹, Jiang Zeyu¹, Zhang Kenan¹, Yao Wei¹, Yan Mingzhe¹, Zhang Hongyun¹, Duan Wenhui¹, Zhou Shuyun^{1, 2, †}

Crystal structure of 1 T ′ -MoTe₂ and diffraction patterns from RHEED and LEED. (a) and (b) Top and side views of the crystal structure of 1 T ′ -MoTe₂. Red and green balls represent Te and Mo atoms, respectively. The dashed box indicates the unit cell. RHEED patterns of (c) the graphene/SiC substrates and (e) the as-grown 1 T ′ -MoTe₂ sample. LEED patterns of (d) the graphene/SiC substrates and (f) the as-grown 1 T ′ -MoTe₂ sample measured at a beam energy of 120 eV. The white and yellow arrows indicate the patterns from graphene and 1 T ′ -MoTe₂, respectively.