Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors
Guo Yang-Yan1, 2, Han Wei-Hua1, 2, †, Zhao Xiao-Song1, 2, Dou Ya-Mei1, 2, Zhang Xiao-Di1, 2, Wu Xin-Yu1, 2, Yang Fu-Hua1, 2, 3
       

Arrhenius plot of conductance in ln G vs. (1/T)1/2 scales for ES-type VRH, with the inset for the density of states near the Fermi energy level.