Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

Guo Yang-Yan^{1, 2}, Han Wei-Hua^{1, 2, †}, Zhao Xiao-Song^{1, 2}, Dou Ya-Mei^{1, 2}, Zhang Xiao-Di^{1, 2}, Wu Xin-Yu^{1, 2}, Yang Fu-Hua^{1, 2, 3}

Arrhenius plot of conductance in ln G vs. (1/T)^1/2 scales for ES-type VRH, with the inset for the density of states near the Fermi energy level.