Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

Guo Yang-Yan^{1, 2}, Han Wei-Hua^{1, 2, †}, Zhao Xiao-Song^{1, 2}, Dou Ya-Mei^{1, 2}, Zhang Xiao-Di^{1, 2}, Wu Xin-Yu^{1, 2}, Yang Fu-Hua^{1, 2, 3}

Arrhenius plot of conductance in ln G vs. 1/T scales for NNH within the temperature range from 175 K to 250 K. The inset shows Mott-type VRH temperature dependence of the conductance in ln G vs. (1/T)^1/4 scales.