Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

Guo Yang-Yan^{1, 2}, Han Wei-Hua^{1, 2, †}, Zhao Xiao-Song^{1, 2}, Dou Ya-Mei^{1, 2}, Zhang Xiao-Di^{1, 2}, Wu Xin-Yu^{1, 2}, Yang Fu-Hua^{1, 2, 3}

(a) The temperature-dependent conductance G (i.e., G = I_DS/V_DS) curves of the device at V_DS = 1 mV within the temperature range from 6 K to 250 K. (b) The temperature-dependent transconductance g_m–V_G characteristics at V_DS = 1 mV, where the transconductance is given by g m = d I DS / d V G . (c) I_DS–V_g curves (upper part) and the corresponding transconductance g_m–V_g curves (lower part) at the temperature of 6 K under the bias V_DS varying from 1 mV to 10 mV. (d) The Arrhenius conductance plots (G vs. 1/T) on logarithmic scale at the gate voltages of V_g1 and V_g2 within the temperature range from 6 K to 250 K, The inset shows the corresponding temperature-dependent conductance data (G vs. T), which are extracted from panel (a) after unified by the onset gate voltage V_gt at different temperatures.