Electronic properties of size-dependent MoTe2/WTe2 heterostructure
Liu Jing1, Ma Ya-Qiang1, †, Dai Ya-Wei2, Chen Yang1, Li Yi1, Tang Ya-Nan3, Dai Xian-Qi1, ‡
       

Plane-integrated electron density difference and 3D isosurface of electron density difference (background) of (a) A-55 LHS and (b) Z-55 LHS, where purple and green areas represent electron accumulation and depletion, respectively, and isosurface value is set to be 0.005 e/Å3. Electron localization function (ELF) of Mo–Te and W–Te bonds across (upper) and away from (lower) interlines for (c) A-55 LHS and (d) Z-55 LHS, respectively.