Charge trapping memory device based on the Ga<sub>2</sub>O<sub>3</sub> films as trapping and blocking layer

Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer

Bai Bing¹, Wang Hong¹, Li Yan¹, Hao Yunxia¹, Zhang Bo¹, Wang Boping¹, Wang Zihang¹, Yang Hongqi¹, Gao Qihang¹, Lü Chao², Zhang Qingshun^{1, ‡}, Yan Xiaobing^{1, 3, §}

XPS depth analysis of the device annealed at 760 °C: (a) Ga 2p_3/2, 2p_1/2, and 3d spectrum, (b) Si 2p spectrum, (c) O 1s spectrum, and (d) atom concentration with various depths from Ga₂O₃ to Si layers.