Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer
Bai Bing1, Wang Hong1, Li Yan1, Hao Yunxia1, Zhang Bo1, Wang Boping1, Wang Zihang1, Yang Hongqi1, Gao Qihang1, Lü Chao2, Zhang Qingshun1, ‡, Yan Xiaobing1, 3, §
       

Cross-sectional TEM images of Au/Ga2O3/SiO2/Si structures annealed at (a) 600 °C, (a) 680 °C, (a) 760 °C, and (a) 780 °C.