Charge trapping memory device based on the Ga<sub>2</sub>O<sub>3</sub> films as trapping and blocking layer

Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer

Bai Bing¹, Wang Hong¹, Li Yan¹, Hao Yunxia¹, Zhang Bo¹, Wang Boping¹, Wang Zihang¹, Yang Hongqi¹, Gao Qihang¹, Lü Chao², Zhang Qingshun^{1, ‡}, Yan Xiaobing^{1, 3, §}

Long-term retention measurement of the high/low state capacitances for CTM devices annealed at (a) 600 °C, (b) 680 °C, (c) 760 °C, and (d) 780 °C, respectively.