Charge trapping memory device based on the Ga<sub>2</sub>O<sub>3</sub> films as trapping and blocking layer

Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer

Bai Bing¹, Wang Hong¹, Li Yan¹, Hao Yunxia¹, Zhang Bo¹, Wang Boping¹, Wang Zihang¹, Yang Hongqi¹, Gao Qihang¹, Lü Chao², Zhang Qingshun^{1, ‡}, Yan Xiaobing^{1, 3, §}

(a) The C–V curves with different scan voltages and (b) the flat band voltage retention of the fabricated sample with 760 °C annealing.