Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Tang Yi-Dan1, 2, †, Liu Xin-Yu1, ‡, Zhou Zheng-Dong3, Bai Yun1, Li Cheng-Zhan3
       

Cross-sectional micrograph in Al-implanted region by 1800 °C/5 min annealing.