Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Tang Yi-Dan
1, 2, †
, Liu Xin-Yu
1, ‡
, Zhou Zheng-Dong
3
, Bai Yun
1
, Li Cheng-Zhan
3
Cross-sectional micrograph in Al-implanted region by 1800 °C/5 min annealing.