Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Cross-sectional micrograph in Al-implanted region by (a) 1800 °C/5 min annealing and (b) 1800 °C/15 min annealing.
Defects and electrical properties in Al-implanted 4H-SiC after activation annealing |
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Cross-sectional micrograph in Al-implanted region by (a) 1800 °C/5 min annealing and (b) 1800 °C/15 min annealing. |
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