Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Tang Yi-Dan1, 2, †, Liu Xin-Yu1, ‡, Zhou Zheng-Dong3, Bai Yun1, Li Cheng-Zhan3
       

Profiles of implanted atoms before and after annealing at 1800 °C, 15 min/5 min by SIMS after removing protective carbon capping layer and 60-nm-thick sacrificial oxidation SiO2 layer.