Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Overlays of implanted samples (a) before and (b) after activation annealing at various temperatures for 15 min and (c) at 1800 °C and different annealing times.
Defects and electrical properties in Al-implanted 4H-SiC after activation annealing |
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Overlays of implanted samples (a) before and (b) after activation annealing at various temperatures for 15 min and (c) at 1800 °C and different annealing times. |
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