Defects and electrical properties in Al-implanted 4H-SiC after activation annealing

Tang Yi-Dan^{1, 2, †}, Liu Xin-Yu^{1, ‡}, Zhou Zheng-Dong³, Bai Yun¹, Li Cheng-Zhan³

Variation of X_min (160° detector ) with temperature of implanted samples before and after activation annealing for 15 min.