Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Tang Yi-Dan
1, 2, †
, Liu Xin-Yu
1, ‡
, Zhou Zheng-Dong
3
, Bai Yun
1
, Li Cheng-Zhan
3
Relationship between the location and the status of damages with RBS/C.