Defects and electrical properties in Al-implanted 4H-SiC after activation annealing |
(a) Simulated concentration versus depth profiles of Al atoms after multiple energy implantations into SiC with the purpose of forming a box-like profile by using the Silvaco TCAD, and (b) doping concentration profiles measured by SIMS after removing 60-nm-thick sacrificial oxidation SiO2 layer. |