Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Tang Yi-Dan1, 2, †, Liu Xin-Yu1, ‡, Zhou Zheng-Dong3, Bai Yun1, Li Cheng-Zhan3
       

(a) Simulated concentration versus depth profiles of Al atoms after multiple energy implantations into SiC with the purpose of forming a box-like profile by using the Silvaco TCAD, and (b) doping concentration profiles measured by SIMS after removing 60-nm-thick sacrificial oxidation SiO2 layer.