Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons
Geometrical model of Geant4 simulation: (a) single memory cell and (b) multiple memory cells.
Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons |
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Geometrical model of Geant4 simulation: (a) single memory cell and (b) multiple memory cells. |
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