Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons

Jin Xiao-Ming^†, Chen Wei, Li Jun-Lin, Qi Chao, Guo Xiao-Qiang, Li Rui-Bin, Liu Yan

Plots of XAPR neutron-induced SEU cross-section versus neutron fluence rate obtained from XAPR equipped separately with four different types of SRAMs.