Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons
SEU cross-section ratio of 2.5-MeV neutron to 14-MeV neutron as a function of technology node.
Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons |
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SEU cross-section ratio of 2.5-MeV neutron to 14-MeV neutron as a function of technology node. |
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