Homogeneous and inhomogeneous magnetic oxide semiconductors |
MR of the NiOx/Pt NW devices at the LRS (a) and HRS (b) with applied magnetic fields parallel and perpendicular to the NW axis; M–H curves of the NiOx/Pt NW arrays at the HRS and LRS with applied magnetic fields parallel (c) and perpendicular (d) to the NW axis.[ |