Homogeneous and inhomogeneous magnetic oxide semiconductors
Li Xiao-Li1, 2, Xu Xiao-Hong1, 2, †
       

The M s (a) and band gap (b) measured at RT for the ZnMgO films as a function of the 2θ of ZnMgO (002) peak obtained from XRD data. The points for three representative films, PM I (in PM regime), FM II and FM VI (in FM regime) are labeled in red. Arrows lead from these points to their equivalent data points labeled in green. PM I: Vac represents PM I annealed in vacuum at 800C for 5h; FM II: Air represents FM II placed in air for 6 months. Reprinted from Ref.[52]. Copyright (2017) with permission from Elsevier.