Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

Cai Xiaolong^{1, 2}, Zhou Dong¹, Cheng Liang¹, Ren Fangfang¹, Zhong Hong², Zhang Rong¹, Zheng Youdou¹, Lu Hai^{1, †}

The RT spectral response characteristics of PIN-0.35, PIN-0.5, and PIN-1.0 measured at 0 V. The inset shows the spectral response characteristics plotted in linear scale.