Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

Cai Xiaolong^{1, 2}, Zhou Dong¹, Cheng Liang¹, Ren Fangfang¹, Zhong Hong², Zhang Rong¹, Zheng Youdou¹, Lu Hai^{1, †}

(a) Dark current of PIN-0.5 measured as a function of temperature ranging from RT to 140 °C, The inset shows the dark current measured at different temperatures near the avalanche region. (b) The V_br variation measured as a function of temperature and the calculated temperature coefficient of the four APDs.