Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

Cai Xiaolong^{1, 2}, Zhou Dong¹, Cheng Liang¹, Ren Fangfang¹, Zhong Hong², Zhang Rong¹, Zheng Youdou¹, Lu Hai^{1, †}

(a) The SPDE/DCR characteristics measured as a function of over bias. (b) DCR–overbias characteristics of PIN-0.5 at RT. The inset shows the natural logarithm of DCR / T 2 versus 1 / K B T under different over biases.