Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses
Cai Xiaolong1, 2, Zhou Dong1, Cheng Liang1, Ren Fangfang1, Zhong Hong2, Zhang Rong1, Zheng Youdou1, Lu Hai1, †
       

(a) The SPDE/DCR characteristics measured as a function of over bias. (b) DCR–overbias characteristics of PIN-0.5 at RT. The inset shows the natural logarithm of DCR / T 2 versus 1 / K B T under different over biases.