Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses

Cai Xiaolong^{1, 2}, Zhou Dong¹, Cheng Liang¹, Ren Fangfang¹, Zhong Hong², Zhang Rong¹, Zheng Youdou¹, Lu Hai^{1, †}

(a) RT reverse I–V and gain–voltage characteristics of PIN-0.5. (b) The reverse dark current as a function of normalized reverse voltage for the four APDs. The inset shows the reverse dark current (normalized to gain) as a function of over bias before breakdown.